Spot supplier in China,YJDN TECHNOLOGY CO., Ltd was established in 2008. One of the largest electronic components distributors in Hongkong and Shenzhen, China.YDJN provides a full range of services
Payment Terms :T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :Available Quantity 4128 Pieces
Delivery Time :Negotiable
Product Model :IR2103PBF
Supplier Package :DIP-8
Brief Description :Analog Isolator ICs
Product Category :Integrated Circuits
Application Areas :Gate Drivers
Date Of Manufacture :Within A Year
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Analog Isolator ICs Power Management Ic Integrated Circuits IR2103PBF PDIP-8
The IR2103(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
App Characteristics
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V and 15V logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Internal set deadtime
High side output in phase with HIN input
Low side output out of phase with LIN input
Description
The IR2104(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts.